Observation of clusters on a metal surfaceKUK, Y.Nanotechnology (Bristol. Print). 1992, Vol 3, Num 3, pp 152-155, issn 0957-4484Conference Paper

ATOM PROBE ANALYSIS OF SEGREGATION IN FE-0,15 WT.% TI = ANALYSE A L'AIDE D'UNE SONDE ATOMIQUE DE LA SEGREGATION DANS FE-0,15 PDS% TIPICKERING HW; KUK Y; SAKURAI T et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 11; PP. 902-904; BIBL. 14 REF.Article

Role of tip structure in scanning tunneling microscopy = Rôle de la structure de la pointe en microscopie tunnel à balayageKUK, Y; SILVERMAN, P. J.Applied physics letters. 1986, Vol 48, Num 23, pp 1597-1599, issn 0003-6951Article

FEASIBILITY OF TOF ATOM-PROBE ANALYSIS OF SILICONMELMED AJ; SAKURAI T; KUK Y et al.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 103; NO 2-3; PP. L139-L142; BIBL. 10 REF.Article

Scanning tunneling microscope instrumentationKUK, Y; SILVERMAN, P. J.Review of scientific instruments. 1989, Vol 60, Num 2, pp 165-180, issn 0034-6748Article

Oscillatory relaxation of the Ag(110) surface = Relaxation oscillatoire de la surface Ag(110)KUK, Y; FELDMAN, L. C.Physical review. B, Condensed matter. 1984, Vol 30, Num 10, pp 5811-5816, issn 0163-1829Article

ATOM-PROBE STUDY OF PHOSPHORUS SEGREGATION AND OF OTHER ELEMENTS IN GRAIN BOUNDARIES OF IRON = ETUDE PAR SONDE ATOMIQUE DE LA SEGREGATION DU PHOSPHORE ET D'AUTRES ELEMENTS AUX JOINTS DE GRAINS DU FERSAKURAI T; KUK Y; BIRCHENALL AK et al.1981; SCR. METALL.; ISSN 0036-9748; USA; DA. 1981; VOL. 15; NO 5; PP. 535-538; BIBL. 11 REF.Article

OPTICAL EMISSION FROM GA IONIZATION AT A FIELD EMITTER = EMISSION OPTIQUE A PARTIR DE L'IONISATION DE GAKUK Y; SAKURAI T; CULBERTSON RJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 957-959; BIBL. 10 REF.Article

DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing techniqueHAU YU LIN; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 905-908, issn 0038-1101, 4 p.Conference Paper

Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structuresABBADIE, A; ALLIBERT, F; BRUNIER, F et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 850-857, issn 0038-1101, 8 p.Conference Paper

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGeYAMAMOTO, Yuji; KÖPKE, Klaus; WEIDNER, Günter et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 824-827, issn 0038-1101, 4 p.Conference Paper

Low-frequency noise in buried-channel SiGe n-MODFETsMADAN, Anuj; CRESSLER, John D; KOESTER, Steven J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 901-904, issn 0038-1101, 4 p.Conference Paper

New method to calibrate the pattern dependency of selective epitaxy of SiGe layersKOLAHDOUZ, M; MARESCA, L; OSTLING, M et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 858-861, issn 0038-1101, 4 p.Conference Paper

Study of Au surfaces by scanning tunnelling microscopy = Etude de surfaces de Au par microscopie tunnel à balayageKUK, Y; SILVERMAN, P. J; CHUA, F. M et al.Journal of microscopy (Print). 1988, Vol 152, Num 2, pp 449-457, issn 0022-2720Article

Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidationDONG WANG; NAKASHIMA, Hiroshi.Solid-state electronics. 2009, Vol 53, Num 8, pp 841-849, issn 0038-1101, 9 p.Conference Paper

Si and SiGe faceting during selective epitaxyPRIBAT, Clément; SERVANTON, Germain; DEPOYAN, Linda et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 865-868, issn 0038-1101, 4 p.Conference Paper

The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETsCHENG, C. Y; FANG, Y. K; LIAO, J. C et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 892-896, issn 0038-1101, 5 p.Conference Paper

Strain-relieving ridge structure in a wetting layer on the W(110) surfaceKIM, T.-H; SEO, J; CHOI, J et al.Surface science. 2005, Vol 595, Num 1-3, pp 30-34, issn 0039-6028, 5 p.Article

Intramolecular structures of C₆₀ molecules adsorbed on the Cu(111)-(1×1) surfaceHASHIZUME, T; MOTAI, K; KUK, Y et al.Physical review letters. 1993, Vol 71, Num 18, pp 2959-2962, issn 0031-9007Article

Adsorbate-induced reconstruction in the Ni(110)-H system = Reconstruction induite par l'adsorbat dans le système Ni(110)-HKUK, Y; SILVERMAN, P. J; NGUYEN, H. Q et al.Physical review letters. 1987, Vol 59, Num 13, pp 1452-1455, issn 0031-9007Article

Surface segregation of Ni-Cu binary alloys studied by an atom-probe = Ségrégation en surface d'alliages binaires Ni-Cu étudiée à l'aide d'une sonde atomiqueSAKURAI, T; HASHIZUME, T; KOBAYASHI, A et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8379-8390, issn 0163-1829Article

Channel length effect in a MOSFET structure by scanning capacitance microscopyKANG, C. J; JEON, D; KUK, Y et al.Surface science. 2003, Vol 544, Num 1, pp 87-92, issn 0039-6028, 6 p.Article

Kinetic processes in the growth and decomposition of a two-dimensional binary alloyKAHNG, S.-J; PARK, J.-Y; KUK, Y et al.Surface science. 1999, Vol 442, Num 3, pp 379-384, issn 0039-6028Article

Order-disorder phase transition of Au(110)-(1×2) reconstruction = Transition de phase ordre-désordre de la reconstruction Au(110)-(1×2)NGUYEN, H. Q; KUK, Y; SILVERMAN, P. J et al.Journal de physique. Colloques. 1988, Num 6, pp 269-273, issn 0449-1947Conference Paper

Atomic displacements in the Au(110)-(1•2) surface = Atomverschiebungen in der Au(110)(1•2)-OberflaecheKUK, Y; FELDMAN, L.C; ROBINSON, I.K et al.Surface science. 1984, Vol 138, Num 2/3, pp L168-L174, issn 0039-6028Article